Magnetic Field Effect in Hydrogen‐Bonded Semiconductor‐Based Organic Field‐Effect Transistors

Herein, the magnetic field effect on source–drain current of organic field-effect transistors with semiconductor layers made H-bonded pigments is studied. In all devices, an external reduces in transistor. The independent direction applied field. observed increase magnetoresistance seems to originate from used or semiconductor–dielectric interface and not influenced by nature gate electrodes semiconductors’ deposition procedure (e.g., grain size, layer thicknesses, etc.). As prepared devices do have single charge carrier nature, formation bipolarons suggested be responsible for effect. presented experiments demonstrate that hydrogen-bonded semiconductors behave no different than their classical van der Waals-bonded fully conjugated counterparts.